| PART |
Description |
Maker |
| 2SD1664 2SD1858 A5800362 2SD1664P 2SD1664T100Q 2SD |
Low-Power, Single/Dual-Level Battery Monitors with Hysteresis
Medium Power Transistor (32V/ 1A)
Medium Power Transistor (32V, 1A)
From old datasheet system
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
|
Littelfuse
Rohm CO.,LTD.
ROHM[Rohm]
|
| 2SA1036K 2SA854 2SA854S 2SA1577 A5800307 |
Medium Power Transistor (-32V/ -0.5A)
Medium Power Transistor (-32V, -0.5A)
From old datasheet system
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
|
Rohm
|
| BC639 BC639-10 BC639-16 BC635 BC635-16 BC637-16 BC |
NPN medium power transistors
TRANSISTOR BIPOLAR
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| AT-42086 AT-42086-BLK AT-42086-TR1 |
Up to 6 GHz Medium Power Silicon Bipolar Transistor
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| TDA7910 TDB7910 |
MEDIUM POWER SINGLE BIPOLAR OPERATIONAL AMPLIFIER
|
STMICROELECTRONICS[STMicroelectronics]
|
| AT-42035 |
Up to 6 GHz Medium Power Silicon Bipolar Transistor GHz中等功率硅双极晶体管
|
HIROSE ELECTRIC Co., Ltd.
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| AT-42085 |
Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip(高达6 GHz中等功率硅双极型晶体
|
Agilent(Hewlett-Packard)
|
| BFP540FESD |
NPN Silicon RF Transisto NPN硅射频Transisto
|
INFINEON[Infineon Technologies AG]
|
| 2SD2657 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
From old datasheet system
|
ROHM
|
| RM60CZ-2H RM60DZ-2H RM60CZ-H RM60DZ-H RM60DZ-M RM6 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| 2SB1181 2SB1241 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
|
ROHM
|
